MP6X3 transistors rev.a 1/3 medium power transistor (60v, 3a) MP6X3 z application low frequency amplifier high speed switching z features 1) high speed switching. (t f : typ. : 30ns at i c =3a) 2) low saturation voltage, typically (typ. : 200mv at i c =2a, i b =200ma) 3) strong discharge power for inductive load and capacitance load. 4) contain two 2sc5824-dies in a package. z structure npn silicon epitaxial planar transistor z dimensions (unit : mm) mpt6 (6) (5) (4) (1) (2) (3) z packaging specifications z inner circuit package code tr 1000 taping basic ordering unit (pieces) MP6X3 type z absolute maximum ratings (ta=25 c) collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature range of storage temperature power dissipation ? 1 pw=10ms 1pulse ? 2 mounted on a ceramic board parameter symbol limits unit v cbo 60 v v ceo 60 v v ebo 6v i c i cp 3 a 6a ? 1 tj 150 c tstg ? 55 to +150 c p d 2.0 1.4 ? 2 continuous pulsed w / total w / element (1) (1) emitter (2) base (3) collector (4) emitter (5) base (6) collector (2) (3) (6) (5) (4)
MP6X3 transistors rev.a 2/3 z electrical characteristics (ta=25 c) parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector cut off current emitter cut off current dc current gain collector-emitter saturation voltage transition frequency collector output capacitance symbol bv ceo bv cbo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. 60 60 6 ? ? 120 ? ? ? ? ? ? ? ? ? 200 200 20 ? ? ? 1.0 1.0 390 500 ? 1 ? 1 ? 2 ? 2 ? 2 ? ? v i c = 1ma i c = 100 a i e = 100 a v cb = 40v v eb = 4v v ce = 2v, i c = 100ma i c /i b = 2.0a/200ma v ce = 10v, i e = ? 100ma, f = 10mhz v cb = 10v, i e = 0a, f = 1mhz v v a a ? mv mhz pf turn-on time storage time fall time t on t stg t f ? ? ? 50 150 30 ? ? ? i c = 3v i b1 = 300ma i b2 = ? 300ma v cc ? 25v ns ns ns typ. max. unit conditions ? 1 pulsed ? 2 see switching time test circuit ? z electrical characteristics curves v ce = 2v 0.01 0.1 10 1 collector current : i c (a) base to emitter voltage : v be (v) 0 0.5 1 1.5 2 fig.1 ground emitter propagation characteristics ta = 100 c ta = 125 c ta = 25 c ta = ? 40 c 0.001 0.01 0.1 10 1 1 10 100 1000 collector current : i c (a) dc current gain : h fe v ce = 5v v ce = 3v v ce = 2v fig.3 dc current gain vs. collector current ta = 25 c fig.4 dc current gain vs. collector current collector current : i c (a) dc current gain : h fe 0.001 0.01 0.1 10 1 1 10 100 1000 ta = 125 c ta = 100 c ta = 25 c ta = ? 40 c v ce = 2v 0.001 0.1 0.01 10 1 0.01 0.1 1 10 collector current : i c ( a) collector saturation voltage : v ce ( sat)(v) fig.5 collector-emitter saturation voltage vs. collector current i c /i b = 10/1 i c /i b = 20/1 ta = 25 c 0.001 0.01 0.1 0.01 0.1 1 10 collector saturation voltage : v ce (sat )(v) collector current : i c (a) 10 1 fig.6 collector-emitter saturation voltage vs. collector current i c /i b = 10/1 ta = 125 c ta = 100 c ta = 25 c ta = ? 40 c 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.5 1.0 1.5 2.0 i b =1ma i b =2m a i b =3ma i b =4ma i b =5m a i b =6m a i b =7m a i b =8ma i b =9m a i b =10ma collector to emitter voltage v ce (v) ta=25 fig.2 grounded emitter output characteristics collector current i c (a)
MP6X3 transistors rev.a 3/3 collector current : i c (a) base emitter saturation voltage : v be (sat ) (v) fig.7 base-emitter saturation voltage vs. collector current 0.001 0.01 0.1 10 1 10 1 0.1 ta = 100 c ta = 125 c i c /i b = 10/1 ta = 25 c ta = ? 40 c 1000 transition frequency : f t (mhz) emitter current : i e (a ) ? 10 ? 1 ? 0.1 ? 0.01 ? 0.001 100 10 1 fig.8 transition frequency ta = 25 c v ce = 10v 100 collector output capacitance : c ob ( pf) collector to base voltage : v cb ( v) 100 10 1 0.1 10 1 fig.9 collector output capacitance ta = 25 c f = 1mhz fig.10 switching time 1 0.01 0.1 10 1000 100 10 collector current : i c (a) switching time (ns) ta = 25 c v cc = 25v i c /i b = 10/1 tstg tf ton z switching characteristics measurement circuits collector current waveform base current waveform i b1 i b2 v in p w i c r l =8.3 ? v cc 25v p w 50 s duty cycle 1% i b1 90% 10% i b2 i c ton tstg tf 0.01 0.1 1 10 0.001 0.1 10 1000 pulse width : pw(s) normalized transient thermal resistance : r(t) ta=25 fig.11 normalized thermal resistance (element) 0.01 0.1 1 10 0.1 1 10 100 collector to emitter voltage : v ce (v) collector current : i c (a) 1ms 10ms 100ms ta=25 single pulse fig.12 safe operating area (tr1&tr2) dc
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